RJK6026DPE View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

RJK6026DPE

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

RJK6026DPE

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max Unit

Test conditions

Drain to source breakdown voltage

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Static drain to source on state

resistance

V(BR)DSS

600

—

—

V ID = 10 mA, VGS = 0

IDSS

—

—

1

µA VDS = 600 V, VGS = 0

IGSS

—

—

±0.1 µA VGS = ±30 V, VDS = 0

VGS(off)

3.0

—

4.5

V VDS = 10 V, ID = 1 mA

RDS(on)

—

2.0

2.4

Ω ID = 2.5 A, VGS = 10 V Note4

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

—

440

—

pF VDS = 25 V

Coss

—

45

—

pF VGS = 0

Crss

—

6

—

pF f = 1 MHz

Turn-on delay time

Rise time

Turn-off delay time

Fall time

td(on)

—

26

—

ns ID = 2.5 A

tr

—

18

—

ns VGS = 10 V

td(off)

—

53

—

ns RL = 120 Ω

tf

—

14

—

ns Rg = 10 Ω

Total gate charge

Gate to source charge

Gate to drain charge

Qg

—

14

—

nC VDD = 480 V

Qgs

—

3

—

nC VGS = 10 V

Qgd

—

7

—

nC ID = 5 A

Body-drain diode forward voltage

VDF

—

0.9

1.5

V IF = 5 A, VGS = 0 Note4

Body-drain diode reverse recovery time

trr

—

250

—

ns IF = 5 A, VGS = 0

diF/dt = 100 A/µs

Notes: 4 Pulse test

REJ03G1479-0100 Rev.1.00 Jul 02, 2009

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