K3305 View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

K3305

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

2SK3305

Figure17. SINGLE AVALANCHE ENERGY vs

STARTING CHANNEL TEMPERATURE

150

ID(peak) = IAS

RG = 25 Ω

125

VGS = 20 V → 0 V

VDD = 150 V

100

EAS = 125 mJ

75

50

25

0

25 50 75 100 125 150 175

Starting Tch - Starting Channel Temperature - ˚C

Figure18. SINGLE AVALANCHE CURRENT vs

INDUCTIVE LOAD

100

RG = 25 Ω

VDD = 150 V

VGS = 20 V → 0 V

Starting Tch = 25 ˚C

10

IAS = 5.0 A

EAS = 125 mJ

1

0.1

100 µ

1m

10 m

L - Inductive Load - H

100 m

6

Data Sheet D14003EJ1V0DS00

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