2N4339 View Datasheet(PDF) - InterFET

Part Name

Description

Manufacturer

2N4339

N-Channel Silicon Junction Field-Effect Transistor

InterFET  

01/99

B-11

2N4338, 2N4339

N-Channel Silicon Junction Field-Effect Transistor

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Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

Continuous Device Power Dissipation

Power Derating (to 175°C)

– 50 V

50 mA

300 mW

2mW/°C

At 25°C free air temperature:

Static Electrical Characteristics

Gate Source Breakdown Voltage

Gate Reverse Current

Gate Source Cutoff Voltage

Drain Saturation Current (Pulsed)

Drain Cutoff Current

V(BR)GSS

IGSS

VGS(OFF)

IDSS

ID(OFF)

2N4338 2N4339

Min Max Min Max Unit

– 50

– 50

V

– 100

– 100 pA

– 100

– 100 nA

– 0.3 – 1 – 0.6 – 1.8 V

0.2 0.6 0.5 1.5 mA

0.05

0.05 nA

(– 5)

(– 5) V

Dynamic Electrical Characteristics

Drain Source ON Resistance

Common Source

Forward Transconductance

Common Source Output Conductance

Common Source Input Capacitance

Common Source

Reverse Transfer Capacitance

rds(on)

gfs

gos

Ciss

Crss

2500

1700 Ω

600 1800 800 2400 µS

5

15 µS

7

7 pF

3

3 pF

Noise Figure

NF

1

1 dB

Process NJ16

Test Conditions

IG = – 1 µA, VDS = ØV

VGS = – 30V, VDS = ØV

VGS = – 30V, VDS = ØV

VDS = 15V, ID = 0.1 µA

VDS = 15V, VGS = ØV

TA = 150°C

VDS = 15V, VGS = ( )

VGS = ØV, ID = Ø A

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

VDS = 15V, VGS = ØV

RG = 1 MΩ, BW = 200 Hz

f = 1 kHz

f = 1 kHz

f = 1 kHz

f = 1 MHz

f = 1 MHz

f = 1 kHz

TOÐ18 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate & Case

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