PDTA143T View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

Manufacturer

PDTA143T

PNP resistor-equipped transistors

NXP Semiconductors. 

NXP Semiconductors

PNP resistor-equipped transistors;

R1 = 4.7 kΩ, R2 = open

Product data sheet

PDTA143T series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

ICBO

ICEO

IEBO

hFE

VCEsat

R1

Cc

collector-base cut-off current

VCB = −50 V; IE = 0

−

−

collector-emitter cut-off current

VCE = −30 V; IB = 0

−

−

VCE = −30 V; IB = 0; Tj = 150 °C −

−

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−

DC current gain

VCE = −5 V; IC = −1 mA

200 −

collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA

−

−

input resistor

3.3 4.7

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz −

−

−100 nA

−1

μA

−50 μA

−100 nA

−

−150 mV

6.1 kΩ

3

pF

2004 Aug 04

5

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