NT5CB128M8DN View Datasheet(PDF) - Nanya Technology

Part Name

Description

Manufacturer

NT5CB128M8DN

1Gb DDR3 D-die SDRAM

Nanya Technology 

NT5CB128M8DN/NT5CB64M16DP

NT5CC128M8DN/NT5CC64M16DP

1Gb DDR3 D-die SDRAM

1.35V -0.067/+0.1V &1.5V ± 0.075V (JEDEC

Standard Power Supply)

8 Internal memory banks (BA0- BA2)

Differential clock input (CK, )

Programmable Latency: 5, 6, 7, 8, 9,

10, 11, 12, 13, (14)

POSTED CAS ADDITIVE Programmable Additive

Latency: 0, CL-1, CL-2

Programmable Sequential / Interleave Burst Type

Programmable Burst Length: 4, 8

8n-bit prefetch architecture

Output Driver Impedance Control

Differential bidirectional data strobe

Write Leveling

OCD Calibration

Dynamic ODT (Rtt_Nom & Rtt_WR)

Auto Self-Refresh

Self-Refresh Temperature

RoHS Compliance

Lead-Free and Halogen-Free

Packages:

78-Ball BGA for x8 components

96-Ball BGA for x16 components

Operation Temperture

Commerical grade (0кЉTCЉ95к)

- BE, CF, DH, EI, FK

Industial grade (-40кЉTCЉ95к)

- CFI, DHI

REV 1.2

May. 2011

CONSUMER DRAM

© NANYA TECHNOLOGY CORP.

All rights reserved

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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