NT5CB128M8DN View Datasheet(PDF) - Nanya Technology

Part Name

Description

Manufacturer

NT5CB128M8DN

1Gb DDR3 D-die SDRAM

Nanya Technology 

NT5CB128M8DN/NT5CB64M16DP

NT5CC128M8DN/NT5CC64M16DP

1Gb DDR3 D-die SDRAM

Description

The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation. It

is internally configured as an eight bank DRAM.

The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices

achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3/L DRAM key features and all of the control and address inputs are

synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks

(CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source

synchronous fashion.

These devices operate with a single 1.5V ± 0.075V &1.35V -0.067/+0.1V power supply and are available in BGA packages.

REV 1.2

May. 2011

CONSUMER DRAM

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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