H7N1004FM View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

H7N1004FM

Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Electronics 

H7N1004FM

Silicon N-Channel MOSFET

High-Speed Power Switching

Features

 Low on-resistance

 RDS(on) = 25 m typ.

 Low drive current

 Available for 4.5 V gate drive

Outline

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM )

1G

123

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

3. Value at Tch = 25C, Rg  50 

Symbol

VDSS

VGSS

ID

ID (pulse)Note1

IDR

IAP Note 3

EAR Note 3

Pch Note 2

Tch

Tstg

Preliminary Datasheet

R07DS0209EJ0300

Rev.3.00

Feb 23, 2012

2

D

1. Gate

2. Drain

3. Source

S

3

Value

100

20

25

100

25

15

22.5

25

150

–55 to +150

(Ta = 25C)

Unit

V

V

A

A

A

A

mJ

W

C

C

R07DS0209EJ0300 Rev.3.00

Feb 23, 2012

Page 1 of 7

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