H7N1004LD View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

H7N1004LD

Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Electronics 

H7N1004LD, H7N1004LS, H7N1004LM

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain

current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

ID (pulse)Note1

IDR

IAP Note 3

EAR Note 3

Pch* Note 2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Value

100

±20

30

100

30

15

22.5

50

150

–55 to +150

Unit

V

V

A

A

A

A

mJ

W

°C

°C

Rev.6.00, Aug.27.2003, page 2 of 11

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