H7N1004LM View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H7N1004LM Datasheet PDF : 12 Pages
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H7N1004LD, H7N1004LS, H7N1004LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
200
100
30
10
3
(TPcDW=C=2O15p0°eCmr)1astmi(o1snsh1o0t)0
10
µs
µs
1
0.3 Operation in
this area is
0.1 limited by RDS(on)
Ta = 25°C
0.02
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50
10 V
Pulse Test
6V
4V
40
30
20
3.5 V
10
VGS = 3 V
0
2
4
6
8
10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
50
V DS = 10 V
Pulse Test
40
30
20
-25°C
10
25°C
Tc = 75°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
Rev.6.00, Aug.27.2003, page 4 of 11
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