H7N1004FN View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

H7N1004FN

Silicon N-Channel MOSFET High-Speed Power Switching

Renesas Electronics 

H7N1004FN

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 100

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off)

1.5

Static drain to source on state

RDS(on)

—

resistance

—

Forward transfer admittance

Input capacitance

|yfs|

20

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Total gate charge

Qg

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery

trr

—

time

Notes: 4. Pulse test

Typ

—

—

—

—

—

25

30

35

2800

240

140

50

9

11

23

110

70

9.5

0.89

45

Max

—

—

±10

10

2.5

35

45

—

—

—

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

V

ns

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 100 V, VGS = 0

ID = 1 mA, VDS = 10 V Note 4

ID = 12.5 A, VGS = 10 V Note 4

ID = 12.5 A, VGS = 4.5 V Note 4

ID = 12.5 A, VGS = 10 V Note 4

VDS = 10 V

VGS = 0

f = 1 MHz

VDD = 50 V

VGS = 10 V

ID = 25 A

VGS = 10 V, ID = 12.5 A

RL = 2.4 Ω

Rg = 4.7 Ω

IF = 25 A, VGS = 0

IF = 25 A, VGS = 0

diF/dt = 100 A/µs

REJ03G5193-0100 Rev.1.00 Oct 23, 2007

Page 2 of 7

Share Link: