H7N1004FN View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H7N1004FN Datasheet PDF : 8 Pages
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H7N1004FN
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
ID = 20 A
60
5, 10 A
40 VGS = 4.5 V
20
VGS = 10 V
0
–25 0 25 50
ID = 20 A
5, 10 A
75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1 0.3
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200
20
VDD = 25 V
VGS
50 V
160
100 V
16
ID = 25 A
120
12
80
8
40
VDD = 100 V
4
50 V
25 V
VDS
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –25°C
10
1
0.1
0.01
0.01
25°C
75°C
VDS = 10 V
Pulse Test
0.1
1
10
100
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Ciss
2000
1000
500
200
Coss
100
50
Crss
20 VGS = 0
f = 1 MHz
10
0
10 20
30 40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1%
RG = 4.7 Ω
100
tr
td(off)
td(on)
tf
10
1
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
REJ03G5193-0100 Rev.1.00 Oct 23, 2007
Page 4 of 7
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