H7N1004FN View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
H7N1004FN Datasheet PDF : 8 Pages
| |||
H7N1004FN
Reverse Drain Current vs.
Source to Drain Voltage
50
40
VGS = 10 V
30
20 5 V
0, -5 V
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source Drain Voltage VSD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
40
IAP = 15 A
32
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
24
16
8
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
0.5
0.3
Tc = 25°C
0.2
0.1 0.1
0.05
0.03 0.02
0.01
0.01
1shot
pulse
θch – c(t) = γ s (t) • θ ch – c
θch – c = 5°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Vin
15 V
VDS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
REJ03G5193-0100 Rev.1.00 Oct 23, 2007
Page 5 of 7
Share Link: 