2SK3725-01 View Datasheet(PDF) - Fuji Electric

Part Name

Description

Manufacturer

2SK3725-01

N-CHANNEL SILICON POWER MOSFET

Fuji Electric 

2SK3725-01

Characteristics

Allowable Power Dissipation

PD=f(Tc)

60

50

40

30

20

10

0

0

25

50

75

100

125

150

Tc [°C]

FUJI POWER MOSFET

Typical Output Characteristics

ID=f(VDS):80 µs pulse test,Tch=25 °C

8

7

6

20V

10V

8V

7.5V

5

4

7.0V

3

2

VGS=6.5V

1

0

0 2 4 6 8 10 12 14 16 18 20 22 24

VDS [V]

Typical Transfer Characteristic

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C

10

Typical Transconductance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C

10

1

1

0.1

0.1

0 1 2 3 4 5 6 7 8 9 10

0.1

1

10

VGS[V]

ID [A]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25°C

4.5

4.0

VGS=6.5V

7.0V

7.5V 8V

10V

3.5

20V

3.0

2.5

2.0

1.5

0

1

2

3

4

5

6

ID [A]

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=1.5A,VGS=10V

8

7

6

5

4

max.

3

typ.

2

1

0

-50 -25 0

25 50 75 100 125 150

Tch [°C]

2

Share Link: