2SK3725-01 View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
2SK3725-01 Datasheet PDF : 4 Pages
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2SK3725-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Ciss
10-1
Coss
10-2
10-3
100
101
VDS [V]
Crss
102
Typical Switching Characteristics vs. ID
103 t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
tf
102
td(off)
101
td(on)
tr
100
10-1
10-1
100
101
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A,Tch=25°C
14
12
Vcc= 90V
10
225V
360V
8
6
4
2
0
0
2
4
6
8
10 12 14 16
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=45V
AS
250
I =1.2A
AS
200
150
I =1.8A
AS
100
I =3A
AS
50
0
0
25
50
75
100
125
150
starting Tch [°C]
3
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