IRFZ44N View Datasheet(PDF) - Suntac Electronic
Part Name
Description
Manufacturer
IRFZ44N Datasheet PDF : 5 Pages
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Duty Cycle
1.000 50%
20%
10%
0.100 5%
2%
1%
0.010 single pulse
0.001
1E-05
IRFZ44N
N-CHANNEL Power MOSFET
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
1E-04
1E-03
1E-02
1E-01
tp, Rectangular Pulse Duration (s)
PDM
t1
t2
NOTES:
DUTY FACTOR: D=t1/t2
PEAK TJ=PDM x ZTJC x RTJC+TC
1E+00
1E+01
Figure 2. Maximum Power Dissipation
vs Case Temperature
140
120
100
80
60
40
20
0
25
50
75
100
125 150
175
TC, Case Temperature (oC)
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
70
60
50
40
30
20
10
0
25
50
75
100
125
150 175
TC, Case Temperature (oC)
Figure 4. Typical Output Characteristics
220
PULSE DURATION = 250 µS
200 DUTY CYCLE = 0.5% MAX
180 TC = 25 oC
160
140
VGS = 15V
VGS = 10V
VGS = 8V
120
VGS = 6V
100
VGS = 5V
80
VGS = 4.5V
60
VGS = 4V
40
VGS = 3.5V
20
VGS = 3V
0
0
5
10
VDS, Drain-to-Source Voltage (V)
Figure 5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
50
45
40
ID = 14A
ID = 28A
35
ID = 55 A
30
25
PULSE DURATION = 250 µS
DUTY CYCLE = 0.5% MAX
TC = 25 oC
20
15
3
4
5
6
7
8
9 10
VGS, Gate-to-Source Voltage (V)
Page 3
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