BC640-016G(2011) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BC640-016G Datasheet PDF : 4 Pages
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BC640-016G
High Current Transistors
PNP Silicon
Features
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
−80
−80
−5.0
−0.5
625
5.0
Unit
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
TO−92
CASE 29
STYLE 14
MARKING DIAGRAMS
BC64
0−16
AYWW G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
June, 2011 − Rev. 1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BC640/D
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