BC640-016G(2011) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC640-016G
(Rev.:2011)

High Current Transistors

ON Semiconductor 

BC640−016G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

Collector − Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

Emitter − Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = −30 Vdc, IE = 0)

(VCB = −30 Vdc, IE = 0, TA = 125°C)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = −5.0 mAdc, VCE = −2.0 Vdc)

(IC = −150 mAdc, VCE = −2.0 Vdc)

(IC = −500 mA, VCE = −2.0 V)

Collector − Emitter Saturation Voltage

(IC = −500 mAdc, IB = −50 mAdc)

Base − Emitter On Voltage

(IC = −500 mAdc, VCE = −2.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.

Symbol

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

hFE

VCE(sat)

VBE(on)

fT

Cob

Cib

Min

−80

−80

−5.0

−

−

25

100

25

−

−

−

−

−

Typ

−

−

−

−

−

−

−

−

−0.25

−

150

9.0

110

Max

Unit

Vdc

−

Vdc

−

−

Vdc

−100

−10

nAdc

mAdc

−

−

250

−

Vdc

−0.5

Vdc

−1.0

MHz

−

pF

−

pF

−

ORDERING INFORMATION

Device

BC640−016G

Package

TO−92

(Pb−Free)

Shipping

5000 Units / Bulk

http://onsemi.com

2

Share Link: