BC640-016G(2011) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC640-016G
(Rev.:2011)

High Current Transistors

ON Semiconductor 

BC640−016G

-1000

-500

SOA = 1S

-200 PD TA 25°C

-100

-50

-20

-10

-5

-2

-1

-1

PD TC 25°C

PD TA 25°C

PD TC 25°C

BC636

BC638

BC640

-2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70 -100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

500

VCE = -2 V

-B

200

-A

100

-L

50

20

-1

-3 -5 -10

-30 -50 -100 -300 -500 -1000

IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

500

-1

300

VCE = -2 V

100

50

20

-1

-10

-100

-1000

IC, COLLECTOR CURRENT (mA)

Figure 3. Current Gain Bandwidth Product

-0.8

VBE(sat) @ IC/IB = 10

-0.6

VBE(on) @ VCE = -2 V

-0.4

-0.2

VCE(sat) @ IC/IB = 10

0

-1

-10

-100

IC, COLLECTOR CURRENT (mA)

-1000

Figure 4. “Saturation” and “On” Voltages

-0.2

-1.0

-1.6

-2.2

-1

VCE = -2 VOLTS

DT = 0°C to +100°C

qV for VBE

-3 -5 -10

-30 -50 -100 -300 -500 -1000

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

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