BC640-16G View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC640-16G

High Current Transistors PNP Silicon

ON Semiconductor 

BC640, BC640−16

−1000

−500

SOA = 1S

−200 PD TA 25°C

−100

−50

−20

−10

−5

−2

−1

−1

PD TC 25°C

PD TA 25°C

PD TC 25°C

BC636

BC638

BC640

−2 −3 −4 −5 −7 −10 −20 −30−40 −50 −70 −100

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

500

VCE = −2 V

−B

200

−A

100

−L

50

20

−1

−3 −5 −10

−30 −50 −100 −300 −500 −1000

IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

500

−1

300

VCE = −2 V

100

50

20

−1

−10

−100

−1000

IC, COLLECTOR CURRENT (mA)

Figure 3. Current Gain Bandwidth Product

−0.8

VBE(sat) @ IC/IB = 10

−0.6

VBE(on) @ VCE = −2 V

−0.4

−0.2

VCE(sat) @ IC/IB = 10

0

−1

−10

−100

IC, COLLECTOR CURRENT (mA)

−1000

Figure 4. “Saturation” and “On” Voltages

−0.2

−1.0

−1.6

−2.2

−1

VCE = −2 VOLTS

DT = 0°C to +100°C

qV for VBE

−3 −5 −10

−30 −50 −100 −300 −500 −1000

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

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