BTS550P View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BTS550P Datasheet PDF : 15 Pages
| |||
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Preliminary Data Sheet BTS550P
Symbol
Values
Unit
min typ max
Reverse Battery
Reverse battery voltage 16)
On-state resistance (Pins 1,5 to pin 3)
Tj = 25 °C:
Vbb = -12V, VIN= 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C:
Integrated resistor in Vbb line
-Vbb
RON(rev)
Rbb
--
--
-- 3.8
--
-- 120
32 V
4.6 mΩ
9
-- Ω
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,
VON < 1.5 V17),
VIS <VOUT - 5 v,
VbIN > 4.0 V
see diagram on page 11
IL = 120 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 12 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 6 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Current sense leakage current
IIN = 0, VIS = 0:
VIN = 0, VIS = 0, IL ≤ 0:
Current sense settling time18)
Overvoltage protection
Ibb = 15 mA
Tj =-40°C:
Tj = 25...+150°C:
kILIS
IIS,lim
IIS(LL)
IIS(LH)
ts(IS)
VbIS(Z)
Input
Input and operating current (see diagram page 12)
IN grounded (VIN = 0)
Input current for turn-off19)
IIN(on)
IIN(off)
19 000 21 100 22 500
19 000 20 900 22 500
18 400 19 600 22 000
19 300 22 500 25 500
19 500 21 500 24 800
18 500 20 500 23 000
19 000 23 000 27 500
19 000 22 500 26 000
17 500 20 000 22 000
17 000 26 000 42 000
17 000 23 800 33 000
17 000 20 000 26 000
6.5
--
-- mA
--
-- 0.5 µA
--
2
--
--
-- 500 µs
60
--
-- V
62 66
--
-- 0.8 1.5 mA
--
-- 80 µA
16) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation!
Increasing reverse battery voltage capability is simply possible as described on page 8.
17) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
18) Not tested, specified by design.
19) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Semiconductor Group
Page 5
1998-Aug-31
Share Link: 