BFW12 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BFW12 Datasheet PDF : 3 Pages
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N-charmel silicon FETs
BFW12
11
BFW13
CHARACTERISTICS
Gate cut-off currents
-vGS = 10 v; YDS = o
- V G S - 1 0 V ; V D S = 0 ; T J = 1S00C
Drain current *)
YDS = is v; VGS= o
Gate -source voltage
I D = 50^^08 = 15V
Gate-source cut-off voltage
ID = 0. 5nA; VQS = 15 V
y parameters at f = 1kHz; Tamb = 25 °C
VDS = 15 V; VGS = 0
Transfer admittance
Output admittance
VDS = 15 V; ID = 500 pA
Transfer admittance
Output admittance
VDS = 1S v'- 1D = 200 (aA
Transfer admittance
Output admittance
f - 1 MHz;Tamb - 25 °C
YDS = is v; VGS = o
Input capacitance
Feedback capacitance
Equivalent noise voltage
YDS = 15 V; 1D = 200 (iA; Tamb = 25 °C
B = 0. 6 to 100 Hz
Tj » 25 °C unless otherwise specified
-iGSS
BFW12 BFW13
< 0.1 0. 1 nA
-IGSS
< 0. 1 0. 1 |^A
IDSS
-VGS
>
1 0.2 mA
<
5 1.5 mA
> 0.5 0.1 V
< 2.0 1.0 V
~V(P)GS < 2.5 1.2 V
|vfs|
|yos|
|yjs|
|yosj
|yfs|
lvos|
> 2.0
< 30
1.0 mS
10 gS
> 1.5
< 10
- mS
- pS
> 0.5
<
5
0.5 mS
5 pS
Cjss
Crs
<
5
5 pF
< 0.80 0.80 pF
Vn
< 0.5 0.5 yV
BFW12
BFW13
JI
RATINGS Limiting values in accordance with the AbsoluteMaximum System (IEC 134)
Drain-source voltage
Drain-gate voltage (open source)
Gate-source voltage (open drain)
^DS max.
^DCO max.
~VGSO max.
30 V
30 V
30 V
Drain current
Gate current
IQ max. 10 mA
IG max.
S mA
Total power dissipation up to Tamb = 86 °C
rtot
max. 150 mW
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient
Tstg
-65 to+175 °C
max. 175
Rt-h i - a
590 kf/Ui
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