2SK3378 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
Manufacturer
2SK3378 Datasheet PDF : 7 Pages
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2SK3378
Static Drain to Source on State
Resistance vs. Temperature
10
ID = 100 m A
8
VGS = 4 V
50 mA
6
10 mA
4
2
10 V 10 mA,50 mA,100 m A
0
Pulse Test
–40
0
40 80 120 160
Case Temperature TC (°C)
Typical Capacitance vs.
Drain to Source Voltage
10
5
Coss
Ciss
2
1.0
Crss
0.5
0.2
VGS = 0
f = 1 MHz
0.1
0
10
20 30
40 50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
VGS = 0, –5V
0.3
0.2 10 V
0.1
5V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance
vs. Drain Current
0.5
VDS = 10 V
Pulse Test
0.2
0.1
Tc = –25°C
25°C
0.05
75°C
0.02
0.01
0.005
0.01
0.02
0.05
0.1
Drain Current ID (A)
10000
5000
2000
1000
500
200
100
50
20
10
0.01
Switching Characteristics
td(off)
tf
tr td(on)
VGS = 10 V, VDD = 10 V
PW = 5 µs, duty ≤ 1 %
0.02
0.05
0.1
Drain Current ID (A)
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 4 of 6
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