FMB3904 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FMB3904 Datasheet PDF : 7 Pages
| |||
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
IBL
Base Cutoff Current
ICEX
Collector Cutoff Current
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 30 V, VEB = 0
VCE = 30 V, VEB = 0
40
V
60
V
6.0
V
50
nA
50
nA
ON CHARACTERISTICS*
hFE
VCE(sat)
VBE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
MMPQ3904
IC = 1.0 mA, VCE = 1.0 V
MMPQ3904
IC = 10 mA, VCE = 1.0 V
MMPQ3904
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
40
30
70
50
100
75
60
30
0.65
300
0.2
V
0.3
V
0.85 V
0.95 V
SMALL SIGNAL CHARACTERISTICS (MMPQ3904 only)
fT
Cobo
Cibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VEB = 0.5 V, IC = 0,
f = 140 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
250
MHz
4.0
pF
8.0
pF
Share Link: 