IXFQ12N80P View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXFQ12N80P Datasheet PDF : 5 Pages
| |||
IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Symbol
gfs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, Note 1
8 14
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
2800
pF
210
pF
19
pF
V = 10 V, V = 0.5 V , I = I
GS
DS
DSS D D25
R
G
= 5 Ω (External)
23
ns
26
ns
70
ns
25
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
51
nC
13
nC
19
nC
(TO-247 & TO-3P)
0.35 °C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
I
V =0V
S
GS
12 A
ISM
Repetitive
36 A
V
I = I , V = 0 V, Note 1
SD
F S GS
1.5 V
trr
IS = 12 A, VGS = 0 V
Q
rm
-di/dt
=
100
A/μs,
V
R
=
100
V
I
rm
200 250 ns
0.8
μC
4
Α
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TO-3P (IXFQ) Outline
TO-247 (IXFH) Outline
123
∅P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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