SD57060-01 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

SD57060-01

RF POWER TRANSISTORS The LdmoST FAMILY

STMicroelectronics 

®

SD57060-01

RF POWER TRANSISTORS

The LdmoST FAMILY

PRELIMINARY DATA

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

s EXCELLENT THERMAL STABILITY

s COMMON SOURCE CONFIGURATION

s POUT = 60 W with 11.5 dB gain @ 945 MHz

s BeO FREE PACKAGE

DESCRIPTION

The SD57060-01 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The SD57060-01 is designed for high

gain and broadband performance operating in

common source mode at 28V. It is ideal for base

station applications requiring high linearity.

M250

epoxy sealed

ORDER CODE

BRANDING

SD57060-01

TSD57060-01

PIN CONNECTION

ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)

Symbol

V(BR)DSS

VGS

ID

P DISS

Tj

TSTG

Parameter

Drain Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation (@ Tc= 70oC)

Max. Operating Junction Temperature

Storage Temperature

1. Drain

2. Gate

3.Source

Value

65

± 20

7

118

200

-65 to 150

Uni t

V

V

A

W

oC

oC

THERMAL DATA (Tcase = 70 oC)

Rth(j-c) Junction-Case Thermal Resistance

1.1

Rth(c -s)* Case-Heatsink T hermal Resist ance

0.5

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

oC/ W

oC/ W

January 2000

1/8

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