JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550LT1 TRANSISTOR( PNP )
FEATURES
Power dissipation
PCM : 0.3 W(Tamb=25℃)
Collector current
ICM : -1.5
A
Collector-base voltage
V(BR)CBO : -40
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
SOT— 23
1. BASE
2. EMITTER
3. COLLECTOR
2.4
1.3
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
Ic= -100 μA, IE=0
-40
V(BR)CEO
Ic= -0.1mA, IB=0
-25
V(BR)EBO
IE= -100 μA, IC=0
-5
Collector cut-off current
ICBO
VCB= -40 V , IE=0
Collector cut-off current
ICEO
VCE= -20 V , IB=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
hFE(1)
VCE= -1V, IC= -100m A
120
hFE(2)
VCE= -1V, IC= -800m A
40
Collector-emitter saturation voltage
VCE(sat) IC=-800 mA, IB= -80m A
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
DEVICE MARKING
SS8550LT1=Y2
VBE(sat) IC=-800 m A, IB= -80m A
VCE= -10V, IC= -50mA
fT
f=30MHz
100
L
120-200
H
200-350
Unit : mm
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
350
-0.5 V
-1.2 V
MHz