Item
19.13.1 Features
Page
789
22.2.6 Flash Memory 910
Characteristics
Table 22.21 Flash
Memory
Characteristics
911
D.1 Port States in
Each Mode
Table D.1 I/O Port
States in Each
Processing State
1207
1208
Revision (See Manual for Details)
Description amended
• Reprogramming capability
The flash memory can be reprogrammed min. 100 times.
Table 22.21 amended
Item
Symbol Min Typ
Max
Erase time*1*3*6
Reprogramming
count
tE
NWEC
—
50
1000
100*7 10000*8 —
Data retention time*9
tDRP
10 —
—
Programming
Wait time after SWE bit x
setting*1
1
—
—
Unit
ms/block
Times
Years
μs
Notes 7 to 9 added
Notes: 7. Minimum number of times for which all
characteristics are guaranteed after rewriting
(Guarantee range is 1 to minimum value).
8. Reference value for 25°C (as a guideline, rewriting
should normally function up to this value).
9. Data retention characteristic when rewriting is
performed within the specification range, including
the minimum value.
Note *1 deleted
(Before) WDTOVF*1 → (After) WDTOVF
Note 1 shown below deleted
Note: 1. The WDTOVF pin function cannot be used in the F-
ZTAT version.
Rev.4.00 Sep. 07, 2007 Page ix of xxx