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HD6432337 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
HD6432337 Datasheet PDF : 1244 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Item
19.13.1 Features
Page
789
22.2.6 Flash Memory 910
Characteristics
Table 22.21 Flash
Memory
Characteristics
911
D.1 Port States in
Each Mode
Table D.1 I/O Port
States in Each
Processing State
1207
1208
Revision (See Manual for Details)
Description amended
Reprogramming capability
The flash memory can be reprogrammed min. 100 times.
Table 22.21 amended
Item
Symbol Min Typ
Max
Erase time*1*3*6
Reprogramming
count
tE
NWEC
50
1000
100*7 10000*8
Data retention time*9
tDRP
10 —
Programming
Wait time after SWE bit x
setting*1
1
Unit
ms/block
Times
Years
μs
Notes 7 to 9 added
Notes: 7. Minimum number of times for which all
characteristics are guaranteed after rewriting
(Guarantee range is 1 to minimum value).
8. Reference value for 25°C (as a guideline, rewriting
should normally function up to this value).
9. Data retention characteristic when rewriting is
performed within the specification range, including
the minimum value.
Note *1 deleted
(Before) WDTOVF*1 (After) WDTOVF
Note 1 shown below deleted
Note: 1. The WDTOVF pin function cannot be used in the F-
ZTAT version.
Rev.4.00 Sep. 07, 2007 Page ix of xxx

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