FQPF9N90C View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQPF9N90C Datasheet PDF : 10 Pages
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FQP9N90C / FQPF9N90C
N-Channel QFET® MOSFET
900 V, 8.0 A, 1.4 Ω
March 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 8 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
GDS
TO-220
GD S
TO-220F
D
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S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP9N90C FQPF9N90C
900
8.0
8.0 *
2.8
2.8 *
32
32 *
± 30
900
8.0
20.5
4.0
205
68
1.64
0.54
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP9N90C
0.61
0.5
62.5
FQPF9N90C
1.85
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP9N90C / FQPF9N90C Rev. C0
www.fairchildsemi.com
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