HGTG40N60C3R View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
HGTG40N60C3R Datasheet PDF : 6 Pages
| |||
HGTG40N60C3R
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG40N60C3R
600
75
40
200
±20
±30
200A at 600V
291
2.33
-55 to 150
260
100
10
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
mJ
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 440V, TJ = 150oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA (See Figure 2)
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Voltage dv/dt (Note 3)
Turn-On Voltage dv/dt (Note 3)
Turn-On Energy (Note 4)
Turn-Off Energy (Note 5)
Thermal Resistance Junction to Case
NOTES:
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
dVCE/dt
dVCE/dt
EON
EOFF
RθJC
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
TC = 25oC
VGE = 15V
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 3Ω, VGE = 15V,
VCE(PK) = 600V, L = 100µH
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VGE = 15V
VCE = 0.5 BVES VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 500µH
Diode used in test circuit
RHRP30120 at 150oC
600
-
-
V
-
-
250
µA
-
-
4.0
mA
-
1.8
2.2
V
-
2.0
2.5
V
4.5
6.2
7.5
V
-
-
±100
nA
200
-
-
A
-
9.8
-
V
-
230
330
nC
-
330
430
nC
-
56
-
ns
-
75
-
ns
-
265
500
ns
-
170
400
ns
-
1.9
-
V/ns
-
6.8
-
V/ns
-
3.5
-
mJ
-
2.5
-
mJ
-
-
0.43
oC/W
3. dVCE/dt depends on the diode used and the temperature of the diode.
4. Turn-On Energy Loss (EON) includes losses due to the diode recovery and is defined as the integral of the instantaneous power loss starting at
the leading edge of the input pulse and ending at the point where the collector
a RHRP30120
about one half
tdhieodvealauteToJf=E1O5N0owCit.hAddioifdfeereant tTdJio=d1e50oorCte. mperature
will
result
voltage equals VCE(ON). This value of EON
in a different EON. For example with diode at
was
TJ =
obtained with
25oC, EON is
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
2
Share Link: 