2SK3497 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3497 Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cut−off current
Gate leakage current
Drain−source breakdown voltage
Drain−source saturation voltage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
Vth
|Yfs|
Ciss
Coss
Crss
VDS = 180V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
ID = 10 mA, VGS = 0 V
VGS = 7 V, ID = 5 A
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 5 A
VDS = 30 V, VGS = 0 V, f = 1 MHz
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
2SK3497
Min Typ. Max Unit
⎯
⎯
100
μA
⎯
⎯
10
μA
180 ⎯
⎯
V
⎯
⎯
0.75
V
1.1
⎯
2.1
V
6.0 12.0 ⎯
S
⎯ 2400 ⎯
⎯ 220 ⎯
pF
⎯
30
⎯
TOSHIBA
K3497
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free
2
2009-01-27
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