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Part Name
Description
2SK3497 View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba
2SK3497 Datasheet PDF : 5 Pages
1
2
3
4
5
I
D
– V
DS
20
4 3.5
16
3
12
8
VGS
=
2.5 V
4
Common source
Tc
=
25°C
Pulse test
0
0
2
4
6
8
10
Drain-source voltage V
DS
(V)
2SK3497
I
D
– V
GS
10
Common source
VDS
=
10 V
Pulse test
8
6
4
Tc
=
100°C
25
2
−
55
0
0
1
2
3
4
Gate-source voltage V
GS
(V)
100
Common source
VDS
=
10 V
Pulse test
10
⎪
Y
fs
⎪
– I
D
Tc
=
100°C
−
55
25
1
0.1
0.1
1
10
Drain current I
D
(A)
V
DS (ON)
– Tc
3
Common source
VGS
=
10 V
Pulse test
2
ID
=
10 A
1
5
2.5
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
10000
1000
Capacitance – V
DS
Ciss
Coss
100
Common source
VGS
=
0 V
f=1 MHZ
Tc
=
25°C
10
0.1
1
Crss
10
100
Drain-source voltage V
DS
(V)
150
120
90
60
30
0
0
P
D
– Tc
40
80
120
160
Case temperature Tc (°C)
3
2009-01-27
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