S3CC9ED View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

S3CC9ED

CMOS Microcontroller for Smart Card Applications

Samsung 

S3CC9ED

BLOCK DIAGRAM

CPU

(CalmRISC16)

ROM

384-Kbyte

ADVANCED INFORMATION

SIO

EEPROM

128-Kbyte

I/O

(H/W

UART)

R.N.G.

(note)

16-Bits

MPU

Address and Data Bus

Scrambling

circuit

RAM

8-Kbyte

Clock

Timers

(16 Bit timer/

20 bit WDT)

Hardware

Detectors

Power-on

Reset

NOTE: R.N.G. means Random Number Generator.

Figure 1. Block Diagram

ELECTRICAL DATA

(TA = – 25 °C to + 85 °C, VDD = 1.62 V to 5.5 V)

Parameter

Supply

current

Symbol

IDD1

Stop Current

IDD2

IDD3

Conditions

FCLK = 5 MHz, 5.5 V

Min

Typ

–

–

FCLK = 4 MHz, 3.3 V

–

–

FCLK = 1 MHz, 5.5 V

–

–

FCLK = GND, 5.5 V

–

–

Table 1. Electrical Characteristics

Max

10

6

200

100

Unit

mA

µA

µA

2

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