2N3055 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2N3055

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2N3055

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; IB=0

VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ; RBE=100Ω

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.4A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A

VBE(on) Base-Emitter On Voltage

IC= 4A ; VCE= 4V

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 30V; IB=B 0

VCE= 100V; VBE(off)= 1.5V

VCE= 100V; VBE(off)= 1.5V,TC=150℃

VEB= 7.0V; IC=0

hFE-1

DC Current Gain

IC= 4A ; VCE= 4V

hFE-2

Is/b

fT

DC Current Gain

Second Breakdown Collector

Current with Base Forward Biased

Current Gain-Bandwidth Product

IC= 10A ; VCE= 4V

VCE= 40V,t= 1.0s,Nonrepetitive

IC= 0.5A ; VCE= 10V;f=1.0MHz

MIN MAX UNIT

60

V

70

V

1.1

V

3.0

V

1.5

V

0.7 mA

1.0

5.0

mA

5.0 mA

20

70

5.0

2.87

A

2.5

MHz

isc Website：www.iscsemi.cn

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