2N3055 View Datasheet(PDF) - Transys Electronics Limited

Part Name

Description

Manufacturer

2N3055

SILICON PLANAR POWER TRANSISTORS

Transys Electronics Limited 

SILICON PLANAR POWER TRANSISTOR

2N3055 NPN

MJ2955 PNP

TO-3

Metal Can Package

ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)

Second Breakdown

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

Second Breakdown Collector Current

with Base Forward Biased

IS/b

VCE=40V,t=1.0 s,Nonrepetitive 2.87

Dynamic Characteristics

Current Gain - Bandwidth Product

Small Signal Current Gain

Small Signal Current Gain Cutoff

Frequency

fT

IC=0.5A, VCE=10V, f=1MHz

2.5

hfe

IC=1A, VCE=4V, f=1KHz

15

fhfe

IC=1A, VCE=4V, f=1KHz

10

*Pulse Test: Pulse Width <300µs, Duty Cycle <2%

MAX

120

UNITS

A

MHz

KHz

Share Link: