2N3055 View Datasheet(PDF) - Nell Semiconductor Co., Ltd
Part Name
Description
Manufacturer
2N3055 Datasheet PDF : 4 Pages
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SEMICONDUCTOR
2N3055(NPN)
MJ2955(PNP) RRooHHSS
Nell High Power Products
Fig.2 Active region safe operating area
20
10
6
4
2
1
0.6
0.4
0.2
6
2N3055, MJ2955
dc
1ms
50µs
500µs
250µs
Bonding wire limit
Thermally limited @ TC = 25°C (single pulse)
Second breakdown limit
10
20
40
60
VCE, Collector-emitter voltage (V)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate lC-VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of fig.2 is based on TC = 25°C; TJ(pk) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated for temperature
according to fig.1
Fig.3 DC Current gain
2N3055(NPN)
500
300
200
TJ = 150°C
25°C
100
70
-55°C
50
30
20
VCE = 4.0V
10
7.0
5.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
lC, Collector current (A)
200
25°C
100
70
-55°C
50
30
20
MJ2955(PNP)
TJ = 150°C
VCE = 4.0V
10
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
lC, Collector current (A)
Fig.4 Collector saturation region
2N3055(NPN)
MJ2955(PNP)
2.0
2.0
TJ = 25°C
TJ = 25°C
1.6
lC = 1.0A
4.0A
8.0A
1.6
lC = 1.0A
4.0A
8.0A
1.2
1.2
0.8
0.8
0.4
0.4
0
5.0 10 20 50 100 200 500 1000 2000 5000
lB, Base current (mA)
0
5.0 10 20 50 100 200 500 1000 2000 5000
lB, Base current (mA)
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