PEMD3 View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PEMD3

NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

Philips Electronics 

Philips Semiconductors

NPN/PNP resistor-equipped transistors;

R1 = 10 kΩ, R2 = 10 kΩ

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

Per transistor; for the PNP transistor with negative polarity

VCBO

VCEO

VEBO

VI

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage TR1

positive

open emitter

open base

open collector

negative

input voltage TR2

positive

negative

IO

ICM

Ptot

Tstg

Tj

Tamb

output current (DC)

peak collector current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

Tamb ≤ 25 °C; note 1

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient notes 1 and 2

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

Product specification

PEMD3

MIN.

MAX.

UNIT

−

50

V

−

50

V

−

10

V

−

+40

V

−

−10

V

−

+10

V

−

−40

V

−

100

mA

−

100

mA

−

200

mW

−65

+150

°C

−

150

°C

−65

+150

°C

−

300

mW

VALUE

416

UNIT

K/W

2001 Nov 07

3

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