Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-92
0.4A
TO-220
1.5A
* I (continuous) is limited by max rated T .
D
j
2.0A
2.5A
Power Dissipation
@ TC = 25°C
1W
45W
θjc
°C/W
125
2.7
θja
°C/W
170
70
TN0620
IDR*
0.4A
1.5A
IDRM
2.0A
2.5A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max Unit
200
V
0.6
1.6
V
-5.0 mV/°C
100
nA
10
µA
1.0 mA
ID(ON)
ON-State Drain Current
0.5
1.0
RDS(ON)
Static Drain-to-Source
ON-State Resistance
6.0
8.0
4.0
6.0
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
1.4
300 400
110 150
40
85
10
35
10
8
20
20
1.8
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Ω
%/°C
m
pF
ns
V
ns
Conditions
VGS = 0V, ID = 2.0mA
VGS = VDS, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 0.25A
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A
VDS = 25V, ID = 0.5A
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V
ID = 1.0A
RGEN = 25Ω
VGS = 0V, ISD = 1.0A
VGS = 0V, ISD = 1.0A
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
t(ON)
90%
t(OFF)
td(ON)
tr
td(OFF)
tF
VDD
OUTPUT
0V
10%
90%
10%
90%
7-56
PULSE
GENERATOR
INPUT
VDD
RL
OUTPUT
D.U.T.
50Ω