APM4953K
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.00
1.75
V = -10V
GS
I = -4.9A
DS
1.50
1.25
1.00
0.75
0.50
0.25
0.00
R @T =25oC:
ON
j
53mΩ
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
20
10
T =150oC
j
T =25oC
j
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD - Source-Drain Voltage (V)
3000
2500
Capacitance
Frequency=1MHz
2000
1500
1000
500 Crss
Ciss
Coss
0
0
5 10 15 20 25 30
-VDS - Drain-Source Voltage (V)
Gate Charge
10
V = -15V
D
I = -4.9A
D
8
6
4
2
0
0
5
10
15
20
25
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
6
Rev. B.1 - Mar., 2005
www.anpec.com.tw