2N5462 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
2N5462 Datasheet PDF : 5 Pages
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2N5460, 2N5461, 2N5462
JFET Amplifier
P−Channel − Depletion
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain − Gate Voltage
Reverse Gate − Source Voltage
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDG
VGSR
IG(f)
PD
40
Vdc
40
Vdc
10
mAdc
350
mW
2.8
mW/°C
Junction Temperature Range
TJ
−65 to +135 °C
Storage Channel Temperature Range
Tstg − 65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
2 DRAIN
3
GATE
1 SOURCE
123
TO−92
CASE 29
STYLE 7
MARKING DIAGRAM
2N
546x
AYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 5
2N546x = Device Code
x = 0, 1, or 2
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5460/D
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