RSR020P03 View Datasheet(PDF) - TY Semiconductor
Part Name
Description
Manufacturer
RSR020P03 Datasheet PDF : 2 Pages
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4V Drive Pch MOS FET
Product specification
RSR020P03
zStructure
TY P-channel MOS FET
zFeatures
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSR020P03
Taping
TL
3000
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : WZ
zInner circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±2
±8
−0.8
−8
1
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
125
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
http://www.twtysemi.com sales@twtysemi.com
4008-318-123
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