NNCD10F View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

Manufacturer

NNCD10F

E.S.D NOISE CLIPPING DIODES

NEC => Renesas Technology 

DATA SHEET

E.S.D NOISE CLIPPING DIODES

NNCD3.3F to NNCD12F

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES

(DOUBLE TYPE, ANODE COMMON)

3PIN MINI MOLD

This product series is a diode developed for E.S.D (Electrostatic

Discharge) noise protection. Based on the IEC1000-4-2 test on

electromagnetic interference (EMI), the diode assures an endur-

ance of no less than 30 kV, thus making itself most suitable for

external interface circuit protection.

Type NNCD3.3F to NNCD12F Series include two elements in

3PIN Mini Mold Package having allowable power dissipation of

200 mW.

FEATURES

• Based on the electrostatic discharge immunity test (IEC1000-4-

2), the product assures the minimum endurance of 30 kV.

• Based on the reference supply of the set, the product achieves

a series over a wide range (15 product name lined up).

PACKAGE DIMENSIONS

(in millimeters)

2.8 ± 0.2

1.5

0.65

+0.1

–0.15

2

1

3

Marking

APPLICATIONS

• External interface circuit E.S.D protection.

• Circuits for Waveform clipper, Surge absorber.

PIN CONNECTION

1. K1: Cathode 1 SC-59 (EIAJ)

2. K2: Cathode 2

3. A : Anode (common)

MAXIMUM RATINGS (TA = 25 °C)

Power Dissipation

P

Surge Reverse Power

PRSM

Junction Temperature

Tj

Storage Temperature

Tstg

200 mW

(Total)

100 W (tT = 10 µs 1 pulse) Fig. 6

150 °C

–55 °C to +150 °C

K2

2

A

K1

3

1

Document No. D11774EJ2V0DS00 (2nd edition)

Date Published December 1996 N

Printed in Japan

©

1996

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