SUM110N08-05 View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

SUM110N08-05

N-Channel 75-V (D-S) 200°C MOSFET

Vishay Semiconductors 

SPICE Device Model SUM110N08-05

Vishay Siliconix

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Static

Gate Threshold Voltage

On-State Drain Currenta

Drain-Source On-State Resistancea

Forward Transconductancea

Forward Voltage a

Dynamic b

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Chargec

Gate-Source Chargec

Gate-Drain Chargec

Turn-On Delay Time c

Rise Time c

Turn-Off Delay Time c

Fall Time c

Reverse Recovery Time

VGS(th)

ID(on)

rDS(on)

gfs

VSD

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

trr

VDS = VGS, ID = 250 µA

VDS > 5 V, VGS = 10 V

VGS = 10 V, ID = 30 A

VGS = 10 V, ID = 30 A, TJ = 125°C

VGS = 10 V, ID = 30 A, TJ = 200°C

VDS = 15 V, ID = 30 A

IS = 110 A, VGS = 0 V

VGS = 0 V, VDS = 25 V, f = 1 MHz

VDS = 35 V, VGS = 10 V, ID = 110 A

VDD = 35 V, RL = 0.40 Ω

ID ≅ 110 A, VGEN = 10 V, RG = 2.5 Ω

IF = 85 A, di/dt = 100 A/µs

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Simulated Measured

Data

Data

3.1

1197

0.0038

0.0063

0.0084

109

0.92

7663

936

406

139

36

45

88

110

130

149

55

0.0038

1

7900

950

550

145

30

45

25

200

65

165

80

Unit

V

A

Ω

S

V

Pf

NC

Ns

www.vishay.com

2

Document Number: 70511

09-Jun-04

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