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Part Name
Description
BSM50GD120DN2G View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BSM50GD120DN2G
IGBT Power Module
Siemens AG
BSM50GD120DN2G Datasheet PDF : 9 Pages
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BSM 50 GD 120 DN2G
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
100
A
I
F
80
70
60
T
j
=125°C
T
j
=25°C
50
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0
V
3.0
V
F
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
Diode
10
0
K/W
Z
thJC
10
-1
10
-2
10
-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
s 10
0
Semiconductor Group
8
Aug-23-1996
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