U430 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
U430 Datasheet PDF : 6 Pages
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U430/431
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
100
50
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
80
40
10 nA
1 nA
Gate Leakage Current
TA = 125_C
200 mA
IG @ ID = 10 mA
60
gfs
40
IDSS
20
30
100 pA
IGSS @ 125_C
200 mA
20
10 pA
10 mA
TA = 25_C
10
1 pA
IGSS @ 25_C
0
0
–1
–2
–3
–4
VGS(off) – Gate-Source Cutoff Voltage (V)
0
–5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100
300
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
80
240
60
180
40
gos
20
120
rDS
60
0.1 pA
0
3
4
9
12
15
VDG – Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
20
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
16
TA = –55_C
12
25_C
8
125_C
4
0
0
0
–1
–2
–3
–4
–5
VGS(off) – Gate-Source Cutoff Voltage (V)
Transconductance vs. Gate-Source Voltage
30
VGS(off) = –1.5 V
VDS = 10 V
f = 1 kHz
24
TA = –55_C
25_C
18
125_C
12
6
0
0.1
1
10
ID – Drain Current (mA)
Transconductance vs. Gate-Source Voltage
50
VGS(off) = –3 V
40
VDS = 10 V
f = 1 kHz
TA = –55_C
30
25_C
20
125_C
10
0
0
–0.4
–0.8
–1.2
–1.6
–2
VGS – Gate-Source Voltage (V)
Document Number: 70249
S-04031—Rev. E, 04-Jun-01
0
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
www.vishay.com
8-3
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