Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
2SD1415A View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SD1415A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
2SD1415A Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
10
Common emitter
Tc =
−
50°C
2.0
8
1.8
1.6
6
1.4
1.2
4
1.0
0.8
2
0.6
IB = 0.4 mA
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
2SD1415A
10
Common emitter
Tc = 25°C
8
I
C
– V
CE
1.6
1.8
2.0
6
4
1.4
1.2
1.0
0.8
0.6
0.4
2
IB = 0.2 mA
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
10
Common emitter
Tc = 100°C
1.8
2.0
1.6
1.4
8
1.2
0.6
1.0
0.8
0.4
6
4
0.2
2
IB = 0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
100000
10000
h
FE
– I
C
Common emitter
VCE = 3 V
Tc = 100°C
1000
25
−
50
100
0.01
0.1
1
10
100
Collector current I
C
(A)
V
CE (sat)
– I
C
30
Common emitter
10
IC/IB = 500
3
Tc =
−
50°C
1
25
100
0.3
0.1
0.1
1
10
100
Collector current I
C
(A)
V
BE (sat)
– I
C
30
Common emitter
10
IC/IB = 500
3
Tc =
−
50°C
25
1
100
0.3
0.1
0.1
1
10
100
Collector current I
C
(A)
3
2009-12-21
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]