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Part Name
Description
2SD1415A View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
2SD1415A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
2SD1415A Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
BE
8
Common emitter
VCE = 3 V
6
4
2
Tc = 100°C
−
50°C
25°C
0
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
Base-emitter voltage V
BE
(V)
2SD1415A
Safe Operating Area
30
10
IC max (pulse)
IC max
(continuous)
3
100
μ
s
*
1 ms
*
10 ms
*
100 ms
*
1
DC operation
Tc = 25°C
0.3
0.1
*
: Single nonrepetitive pulse
0.03 Tc = 25°C
Curves must be derated
linearly with increase in
VCEO max
temperature.
0.01
1
3
10
30
100
300
Collector-emitter voltage V
CE
(V)
4
2009-12-21
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