4427GM View Datasheet(PDF) - Advanced Power Electronics Corp
Part Name
Description
Manufacturer
4427GM Datasheet PDF : 5 Pages
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60
T A = 25 o C
10V
7.0V
50
5.0V
4.5V
40
30
20
V G =3.0V
10
0
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
I D = 7.5 A
T A =25 ℃
8
6
4
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
14
T j =150 o C
T j =25 o C
12
10
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4427GM
60
T A = 150 o C
50
40
10V
7.0V
5.0V
4.5V
30
V G =3.0V
20
10
0
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I D = 7.5 A
V G =10V
1.4
0.9
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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