RJK5012DPP
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
500
Zero gate voltage drain current
IDSS
—
Gate to source leak current
IGSS
—
Gate to source cutoff voltage
VGS(off)
3.0
Static drain to source on state
resistance
RDS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
VDF
—
Body-drain diode reverse recovery time
trr
—
Notes: 5. Pulse test
Preliminary
Typ
—
—
—
—
0.515
Max
—
1
0.1
4.5
0.620
Unit
V
A
A
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 6 A, VGS = 10 V Note5
1100
120
15
30
23
77
16
29
5.5
13
0.89
280
—
—
—
—
—
—
—
—
—
—
1.50
—
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 6 A
ns VGS = 10 V
ns RL = 41.6
ns Rg = 10
nC VDD = 400 V
nC VGS = 10 V
nC ID = 12 A
V IF = 12 A, VGS = 0 Note5
ns IF = 12 A, VGS = 0
diF/dt = 100 A/s
REJ03G1545-0200 Rev.2.00
Jun 30, 2010
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