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DCR1002SF14 View Datasheet(PDF) - Dynex Semiconductor

Part Name
Description
Manufacturer
DCR1002SF14
Dynex
Dynex Semiconductor Dynex
DCR1002SF14 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
DCR1002SF
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) on-state current
TSM
I2t
I2t for fusing
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Conditions
10ms half sine; T = 125oC
case
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 125oC
VR = 0
Max. Units
26
kA
3.38 x 106 A2s
32.5
kA
5.28 x 106 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Clamping force 19.5kN
with mounting compound
Anode dc
Cathode dc
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.018 oC/W
- 0.036 oC/W
- 0.036 oC/W
-
0.003 oC/W
- 0.006 oC/W
-
135
oC
-
125
oC
–55 125
oC
18.0 22.0 kN
3/9
www.dynexsemi.com

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