DCR1002SF14 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR1002SF14

Phase Control Thyristor

Dynex Semiconductor 

DCR1002SF

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125oC

-

dV/dt Maximum linear rate of rise of off-state voltage To 67% V T = 125oC.

-

DRM j

dI/dt Rate of rise of on-state current

From 80% VDRM to 1000A Repetitive 50Hz -

Gate source 20V, 10Ω

t

r

=

0.5µs

to

JEDEC

RS397

Non-repetitive

-

VT(TO)

Threshold voltage

At Tvj = 125oC

-

rT

On-state slope resistance

tgd

Delay time

tq

Turn-off time

At Tvj = 125oC

-

VD = 67% VDRM, Gate source 30V, 15Ω

Rise time 0.5µs, Tj = 25oC

-

I

T

=

800A,

tp

=

1ms,

Tj

=

125˚C,

VRM = 50V, dIRR/dt = 20A/µs,

-

VDR = 67% VDRM, dVDR/dt = 20V/µs linear

100 mA

1000 V/µs

500 A/µs

1000 A/µs

0.9

V

0.17 mΩ

2

µs

200 µs

IL

Latching current

IH

Holding current

Tj = 25oC, VD = 5V

Tj = 25oC, Rg-k = ∞

-

350 mA

-

100 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

IGT

V

GD

V

FGM

VFGN

VRGM

IFGM

P

GM

P

G(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Conditions

VDRM = 5V, Tcase = 25oC

V = 5V, T = 25oC

DRM

case

At 67% V T = 125oC

DRM case

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

3.5

V

200 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/9

www.dynexsemi.com

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